Etching of Silicon in Fluoride Solutions
نویسنده
چکیده
14 The development and status of what is commonly called the Gerischer mechanism of silicon etching in 15 fluoride solutions is reviewed. The two most widely used and studied wet etchants of silicon are F 16 and OH . Their mechanisms of atom removal share many things in common; in particular, chemical pas17 sivation by a hydrogen-terminated surface plays an important role in both. Crucially, however, their ini18 tiation steps are different, and this leads to important differences in the structures of the materials 19 produced by the etchants. The initiation of etching by F is electrochemical in nature, responding to 20 the electronic structure of the Si, and is, therefore, a self-limiting reaction that can produce nanocrystal21 line porous silicon. Hydroxide etching destroys porous silicon because its initiation step is a catalytic 22 chemical reaction and not a self-limiting process. A number of unanswered questions regarding the 23 dynamics of fluoride etching are highlighted Q3 . 24 2009 Elsevier B.V. All rights reserved.
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